sot-563 EMD12 general purpose transistors (dual transistors) features z both the dtc144e chip and dta144e chip in a package z mounting possible with sot-56 3 automatic mounting machines. z transistor elements are independ ent, eliminating interference. 1 z mounting cost and area be cut in half. marking: d12 equivalent circuit t r1 absolute maximum ratings (ta=25 ) parameter symbol limits unit supply voltage v cc 50 v input voltage v in -10~40 v i o 100 output current i c(max) 100 ma power dissipation pd 150 mw junction temperature tj 150 storage temperature tstg -55~150 t r1 electrical characteristics (ta=25 ) parameter symbol min. typ max. unit conditions v i(off) 0.5 v cc =5v, i o =100 a input voltage v i(on) 3 v v o =0.3v, i o =2ma output voltage v o(on) 0.1 0.3 v i o /i i =10ma/0.5ma input current i i 0.18 ma v i =5v output current i o(off) 0.5 a v cc =50v, v i =0 dc current gain g i 68 v o =5v, i o =5ma input resistance r 1 32.9 47 61.1 k ? - resistance ratio r 2 /r 1 0.8 1 1.2 - transition frequency f t 250 mhz v ce =10v, i e =5ma, f=100mhz www.htsemi.com semiconductor jinyu 1 date:2011/ 05
t r2 absolute maximum ratings (ta=25 ) parameter symbol limits unit supply voltage v cc -50 v input voltage v in -40~10 v i o -100 output current i c(max) -100 ma power dissipation pd 150 mw junction temperature tj 150 storage temperature tstg -55~150 t r2 electrical characteristics (ta=25 ) parameter symbol min. typ max. unit conditions v i(off) -0.5 v cc =-5v, i o =-100 a input voltage v i(on) -3 v v o =-0.3v, i o =-2ma output voltage v o(on) -0.1 -0.3 v i o /i i =-10ma/-0.5ma input current i i -0.18 ma v i =-5v output current i o(off) -0.5 a v cc =-50v, v i =0 dc current gain g i 68 v o =-5v, i o =-5ma input resistance r 1 32.9 47 61.1 k ? - resistance ratio r 2 /r 1 0.8 1 1.2 - transition frequency f t 250 mhz v ce =-10v, i e =-5ma, f=100mhz www.htsemi.com semiconductor jinyu 2 date:2011/ 05 EMD12
|
